The EV5A16B is a stacked solution, with two 16Mb MRAM devices from Everspin Technologies and is offered in a 54 pins stacked-package *TSOP. Available in commercial (0°C to 70°C) and Industrial (-40°C to 85°C) temperature ranges, the MRAM technology offers SRAM-compatible, 35-ns read/write timing with data retention and endurance and is used with microprocessors, **DSP, storage systems, instruments, and ***FPGAs.
Brad Little, Vice President and General Manager of e2v inc’s Semiconductor business unit commented, “Our new stacked-package MRAM will have a significant impact on our customers’ systems by addressing the industry requirements for a high-density memory, available in a small footprint with the ability to increase system performance. By improving the size, weight and power (SWaP) of our product you are also talking about major cost savings for the customer.”
The new EV5A16B is available now.
About e2v : e2v inc, a part of the global e2v Group of companies, is a leading provider of RF power, imaging and high-reliability semiconductor solutions to North American Aerospace, Defense, Medical and Industrial customers. e2v inc offers a diverse portfolio of products and services, including wideband RF components and sub-systems, high performance imaging sensors and cameras, and high-reliability semiconductor products and lifecycle management services to ensure long-term continuity of supply.
About Everspin Technologies:
Everspin Technologies is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin Torque MRAM (ST-MRAM) into markets and applications where datapersistence and integrity, low latency, and security are paramount. With over 40 Million MRAM and ST-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. With an intellectual property portfolio of more than 500 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) ST-MRAM bit cells. Everspin has established high-quality manufacturing worldwide, along with enabling a full turn-key 300mm high-volume foundry partner for advanced technology nodes including 40nm, 28nm and beyond. In addition to launching discrete memory solutions with new densities and advanced interfaces, including the world’s first commercialization and volume shipments of ST-MRAM, Everspin is delivering on the company’s strategy to proliferate MRAM and ST-MRAM as mainstream embedded memories for use in MCUs, GPUs, DSPs, Application, Processors, and ASICs, earning Everspin its description as “The MRAM Company”. www.everspin.com
