“Scientists from IBM Research – Zurich are claiming a world-first, for their recent demonstration of “reliable multi-bit phase-change memory [PCM] technology.” PCM involves the use of materials that change between crystalline and amorphous states, the two states having different levels of electrical resistance – data is stored in a binary fashion, using one level to represent a 0, and the other to represent a 1. By applying new techniques to existing PCM technology, the researchers were reportedly able to write and retrieve data 100 times faster than is possible with Flash.” via Gizmag
June 30, 2011
