Layout of FeTRAM, which combines silicon nanowires with a ‘ferroelectric’ polymer to create a new type of ferroelectric transistor (Image: Birck Nanotechnology Center, Purdue University)
Researchers at Purdue University are developing a new type of computer memory that they claim could be faster than SRAM and use 99 percent less energy than flash memory. Called FeTRAM, for ferroelectric transistor random access memory, the new technology fulfills the three basic functions of computer memory; writing, reading and storing information for a long time. It is also a nonvolatile form of memory, meaning that it retains its data after the computer has been turned off. Its creators claim it has the potential to replace conventional memory systems. via Gizmag
