industry news
Subscribe Now

Vishay Intertechnology 60 V MOSFET Increases Efficiency and Power Density With RDS(ON) of 4 mΩ in 3.3 mm² Footprint

Designed for Standard Gate Drives, Device Features Low Gate Charge of 22.5 nC and QOSS of 34.2 nC in PowerPAK® 1212-8S Package

MALVERN, Pa. — Aug. 12, 2019 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 60 V TrenchFET® Gen IV n-channel power MOSFET that is the industry’s first optimized for standard gate drives to deliver maximum on-resistance down to 4 mΩ at 10 V in the thermally enhanced 3.3 mm by 3.3 mm PowerPAK® 1212-8S package. Designed to increase efficiency and power density in switching topologies, the Vishay Siliconix SiSS22DNfeatures a low gate charge of 22.5 nC along with low output charge (QOSS).

Unlike logic-level 60 V devices, the typical VGS(th) and Miller plateau voltage of the SiSS22DN are enhanced for circuits with gate drive voltages above 6 V, where the device provides optimized dynamic characteristics that enable short dead-times and prevent shoot-through in synchronous rectifier applications. The SiSS22DN’s industry-low on-resistance is 4.8 % lower than the next best product — and rivals the leading logic-level device — while its QOSS of 34.2 nC results in the best in class QOSS times on-resistance, a critical figure of merit (FOM) for MOSFETs used in power conversion designs employing zero voltage switching (ZVS) or switch-tank topology. To achieve higher power density, the device utilizes 65 % less PCB space than similar solutions in 6 mm by 5 mm packages.

The SiSS22DN’s specifications are fine-tuned to minimize conduction and switching losses simultaneously. The result is increased efficiency that can be realized in multiple power management system building blocks, including synchronous rectification in AC/DC and DC/DC topologies; primary-side switching in DC/DC converters, half-bridge MOSFET power stages in buck-boost converters, and OR-ing functionality in telecom and server power supplies; motor drive control and circuit protection in power tools and industrial equipment; and battery protection and charging in battery management modules.

The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.

Samples and production quantities of the SiSS22DN are available now, with lead times of 30 weeks subject to market conditions. Pricing for U.S. delivery in 10,000-piece quantities is approximately $0.67 per piece.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world’s largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and “one-stop shop” service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

Leave a Reply

featured blogs
May 29, 2020
Each industry has its own standards and requirements that components must meet in order to be considered usable for that industry. There are some tests that are common between industries, such as outgassing, but more often than not there are going to be different requirements...
May 29, 2020
[From the last episode: We reviewed our tour of IoT and cloud computing.] We'€™ve talked about conventional computing, so now we'€™re going to look at a new computing application that'€™s taking the industry by storm: machine learning. We did a quick overview a long tim...
May 29, 2020
AI is all around us, but what is it exactly? For curious minds, this series of blogs explores the fundamental building blocks of AI, which together build the AI solutions we see today and that will enable the products we will enjoy tomorrow. This blog throws light on Supervis...
May 27, 2020
Could life evolve on ice worlds, ocean worlds, ocean worlds covered in ice, halo worlds that are tidally locked with their sun, and rogue worlds without a sun? If so, what sort of life might it be?...

Featured Video

DesignWare 112G Ethernet PHY IP JTOL & ITOL Performance

Sponsored by Synopsys

This video shows the Synopsys 112G Ethernet PHY IP in TSMC’s N7 process passing the jitter and interference tolerance test at the IEEE-specified bit error rate (BER). The IP with leading power, performance, and area is available in a range of FinFET processes for high-performance computing SoCs.

Click here for more information

Featured Paper

Choose the Ideal Bluetooth Protocol for Your Design

Sponsored by Maxim Integrated

Most people do not understand the difference between Bluetooth Low Energy and Bluetooth Basic Rate/Enhanced Data Rate. The emergence of Bluetooth 5 has further confused the landscape. This application note explains the differences and suggests ways to determine the best version for your design.

Click here to download the whitepaper