STMicroelectronics Drives the Future of EVs and Industrial Applications with New Silicon-Carbide Devices
- ST’s latest-generation silicon-carbide (SiC) power devices extend leadership
in performance and reliability for e-mobility and energy-efficient industry - Continued long-term investment in SiC positions ST for future growth
Geneva, Switzerland, December 9, 2021 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, is introducing its third generation of STPOWER silicon-carbide (SiC) MOSFETs[1], advancing the state-of-the-art in power devices for electric-vehicle (EV) powertrains and other applications where power density, energy efficiency, and reliability are important target criteria.

