Imec demonstrates successful monolithic integration of Schottky diodes
LEUVEN (Belgium), 13 December, 2021— This week, at the 2021 International Electron Devices Meeting (IEEE IEDM 2021), imec, a world-leading research and innovation center in nanoelectronics and digital technologies, presents the successful co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200 V GaN-on-SOI smart power integrated circuits (ICs) platform developed on 200 mm substrates. The addition of these components enables the design of chips with extended functionality and increased performance that takes monolithically-integrated GaN power ICs one step further. The achievement paves the way towards smaller and more efficient DC/DC convertors … Read More → "Imec demonstrates successful monolithic integration of Schottky diodes"

