6th March 2023 – Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, will be very visible at the upcoming Applied Power Electronics Conference (APEC) event in Orlando, Florida from March 19-23, 2023 at the Orange County Convention Center. Key Innoscience personnel will present three talks: -11.30am, March 21st, Dr Marcon Denis, general manager of Innoscience Europe: ‘High performance GaN switches for LV and HV applications on cost-optimized 8-inch GaN-on-Si technology platforms.’ -10.40am, March 22nd, Dr Pengju Kong, VP Product Design Engineering: ‘Integrated GaN Solution for LV applications: bringing efficiency and operating frequency to the next level.’ -09.20am, March 23rd, Dr Pengju Kong, VP Product Design Engineering: ‘2.4kW All-GaN 48V to 12V bidirectional converter with BiGaN load switch for mild hybrid electric vehicles (MHEV).’ Innoscience’s booth – 310 – will feature exciting demos using Innoscience’s GaN power devices (InnoGaN™) under the themes: InnoGaN in Life, InnoGaN in Automotive and InnoGaN in Datacenters. InnoGaN in Life This theme shows that GaN is penetrating everywhere in our daily life, highlighted by the following diverse demos: -Mobile phones from Oppo and RealMe showing how one Innoscience Bidirectional GaN device (VGaNTM) device can replace two silicon MOSFETs in a solution that is 50% smaller and more efficient than other silicon-based solutions.
-A 3kW outdoor storage power supply that reduces the required size of portable batteries. -Yadea e-mobility chargers made with InnoGaN for e-scooters that are more efficient and compact than what is possible using silicon devices. -300W class D demo delivering the ultimate audio experience and higher energy efficiency. -200W LED driver using GaN that is smaller, thinner and more efficient than a silicon solution. InnoGaN in Automotive The automotive industry is reacting very positively to GaN. Innoscience will demo: -LIDAR systems from Hesai featuring 100V InnoGaN to drive the LIDAR’s laser. -A 2.4kW 48V-12V bidirectional converter for MEHVs. -Highly powerful and compact 150W buck boost converters for in-car chargers. -A 3-phase motor drive power stage where three half-bridge SolidGaNTM devices from Innoscience replace nine silicon parts.
-Gan Solution for Class D audio amplifier for a more efficient solution and higher audio quality. InnoGaN in Datacenters Innoscience offers a solution for each stage of the power conversion that happens inside a data center to make them more efficient, smaller and even more cost effective with fewer components: -2kW PSU and 4kW PFC for the first AC/DC power conversion that is much smaller and efficient than a Silicon solution with a power density of 150W/in3 -480W and 600W 48V-12V DC-DC conversion made with discrete LV InnoGaN with a much higher efficiency and half the size of a silicon solution. -1kW 48V-12V DC-DC made with SolidGaNTM ISG3201 (integrated half bridge with driver) for the ultimate performance in terms of efficiency and size with a power density as high as 2150 W/in3 -VCore solution for the final DC-DC conversion stage down to 1V for the CPU. Details Dr. Lei Feng, Chief Marketing Officer at Innoscience: “GaN is truly everywhere, as we hope to show visitors at APEC. We’ll be debuting new products including an integrated SolidGaNTM product, which integrates two 100V low Rdson GaN devices in half bridge and a gate driver into one compact package., We also keep enriching our product offering in in industry standard packages (DFN, Toll, QFN), a new TO252 and TO220 family dispesl the myth that GaN devices must come in exotic wrappers!” Emphasizing this last point, Innoscience will keep pushing forward the standardization of GaN device packages. Having second sources for parts will further reassure customers and speed the transition to GaN. |
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| About Innoscience
Innoscience is an Integrated Device Manufacturer (IDM) founded in December 2015 with investment from CMBI, ARM, SK and other prestigious investors. With the development of new technologies, the electric power grid and power electronic systems across the world are undergoing a massive transformation. Our vision is to create an energy ecosystem with effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions. In November 2017, Innoscience first established a mass production 8-inch wafer line for GaN-on-Si devices in Zhuhai. In order to fulfill the rapidly growing power demands, Innoscience has inaugurated a new facility in the Suzhou in September 2020. As a cutting-edge GaN technology provider, Innoscience’s 1,400+ employees and over 300 R&D experts are dedicated to delivering high performance and high reliability GaN power devices that can be widely used in diverse applications including cloud computing, electric vehicles (EV) and automotive, portable devices, mobile phones, chargers and adapters. For more information, please visit www.innoscience.com. |
