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Silicon Carbide Diodes, FETs and Modules: ROHM’s Powerful Advantages and Extensive Lineup — ROHM and Mouser Electronics

 

Wide-bandgap materials such as silicon carbide significantly outperform silicon in numerous applications such as power. With higher voltage capability and lower conduction lose, switching applications can be much more efficient. In this episode of Chalk Talk, Amelia Dalton chats with Mitch Van Ochten from ROHM about the properties of wide-bandgap materials and how you can take advantage of them in your next design.

Click here for more information about ROHM Semiconductor Silicon Carbide (SiC) Power Devices

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