A New Spin on Logic
Way back in 2008, we took a look at MRAM technology. As a brief review, you may recall that Crocus in particular takes advantage of tunneling magneto-resistance between two magnetic layers. The bottom layer is fixed, or “pinned” and acts as a reference layer. The top one – also referred to as the “free” or “storage” layer – can have its magnetic polarity (or, more accurately, moment) reversed. Selectivity can be improved by engineering the materials so that a current during the write operation will heat the cell and lower the “coercivity” … Read More → "A New Spin on Logic"