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Rad-Hard Voltage References from STMicroelectronics Deliver Stable Reliable Performance in All Conditions

Geneva, October 15, 2014 – STMicroelectronics has added two shunt Voltage References to its rapidly expanding portfolio of rad-hard products for aerospace applications. The RHF1009A is an adjustable (2.5 – 5.5V) voltage reference, while the RHF100 is a 1.2V fixed voltage reference. Specifically designed to sustain the radiation levels found in space and pin-compatible with similar industry-standard devices, these voltage references are QML-V qualified by the American Space Agency (DLA) and included in the European Preferred Parts List (EPPL) of preferred and suitable components to be used by European manufacturers of spacecraft hardware and associated equipment.

Both devices are fabricated in ST’s high-reliability 250nm BiCMOS technology that has been proven through long-term production of high-volume consumer applications and a wide variety of ICs for demanding aerospace, automotive, and medical applications, including other radiation-hardened products such as Analog-to-Digital Converters.

The excellent electrical performance of these devices includes a temperature coefficient of just 5 ppm (typical), an accuracy of +/- 0.15% achieved through laser trimming, excellent part-to-part temperature-profile matching, and a wide cathode current range from 40µA to 12mA, allowing flexibility while keeping accuracy and stability. 

The excellent electrical performance is combined with best-in-class radiation resistance, both in Total Ionization Dose (TID) and to Single Event Effect (SEE).  The devices are ELDRS[1]-free up to 300krad (their key parameters remain constant whatever the dose rate up to a very high level), are fully immune to Single-Event Latch-up (SEL free up to 120 MeV.cm2/mg @ 125°C), and have a low probability of Single-Event Transient (SET Cross section < 3.10-4), such effects always being of very short duration and low amplitude.  A detailed SET test report is available upon request.

Designed, qualified, and manufactured in Europe, the devices are supported by intensive characterization data, a full set of macromodels (Pspice, Eldo, ADS) and demo boards.

 

For further information please visit: www.st.com/radhard-vref-nb

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